Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

ABSTRACT

Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. patentapplication Ser. No. 13/343,147, filed on Jan. 4, 2012, which iscontinuation application of U.S. patent application Ser. No. 12/586,970,filed on Sep. 30, 2009, now U.S. Pat. No. 8,110,843, which claimspriority from Korean Patent Application No. 10-2008-0096685 filed onOct. 1, 2008, in the Korean Intellectual Property Office, the contentsof which applications are incorporated herein in their entirety byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light emitting element, a lightemitting device including the same, and fabrication methods of the lightemitting element and light emitting device.

2. Description of the Related Art

A light emitting element such as a LED (Light Emitting Diode) emitslight by combination of electrons and holes. Such a light emittingelement has small power consumption, long life span, can be installed ina limited space, and has strong characteristics against vibration.

SUMMARY OF THE INVENTION

An important consideration in light emitting elements is improvement inlight extraction efficiency. The light extraction efficiency indicatesthe ratio of light emitted to the exterior (for example, air ortransparent resin surrounding the light emitting element) to lightgenerated from the interior of the light emitting element. The opticalrefractive index of a light emitting element can be, for example, about2.2 to about 3.8, the optical refractive index of air is 1, and theoptical refractive index of a transparent resin can be 1.5. For example,if the optical refractive index of the light emitting element is 3.4, acritical angle when light generated from the inside of the lightemitting element exits to air is about 17°, and the critical angle whenlight exits to the transparent resin can be about 26°. In this case, theoptical refractive index when light generated from the inside of thelight emitting element exits to air is about 2.2% and the opticalrefractive index when light exits to the transparent resin is about 4%.Thus, a very small amount of light generated from the inside of thelight emitting element exits to the outside. The remaining light isreflected from a surface of the light emitting element and is containedinside the light emitting element.

The present invention provides a light emitting element and a lightemitting device with improved light extraction efficiency.

The present invention also provides fabrication methods of the lightemitting element and the light emitting device with improved lightextraction efficiency.

According to an aspect of the present invention, there is provided alight emitting element comprising: a substrate; a light emittingstructure including a first conductive layer of a first conductivitytype, a light emitting layer, and a second conductive layer of a secondconductivity type which are sequentially stacked; a first electrodewhich is electrically connected with the first conductive layer; and asecond electrode which is electrically connected with the secondconductive layer and separated apart from the first electrode. At leasta part of the second electrode is connected from a top of the lightemitting structure, through a sidewall of the light emitting structure,and to a sidewall of the substrate. According to another aspect of thepresent invention, there is provided a light emitting elementcomprising: a substrate; a light emitting structure including a firstconductive layer of a first conductivity type, a light emitting layer,and a second conductive layer of a second conductivity type which aresequentially stacked, wherein the width of the first conductive layer islarger than the width of the second conductive layer and the width ofthe light emitting layer and the first conductive layer protrudes onsides more than the second conductive layer or the light emitting layer;a first electrode which is electrically connected with the firstconductive layer and formed on a protruding region of the firstconductive layer; and a second electrode which is electrically connectedwith the second conductive layer, separated apart from the firstelectrode, and surrounding the first electrode.

According to an aspect of the present invention, there is provided alight emitting device comprising one of the light emitting elementsdescribed above.

According to another aspect of the present invention, there is provideda method of fabricating a light emitting element, the method comprising:forming a groove in a substrate to define a device formation region;forming a light emitting structure including a first conductive layer ofa first conductivity type, a light emitting layer, and a secondconductive layer of a second conductivity type which are sequentiallystacked on the device formation region, wherein the width of the firstconductive layer is larger than the width of the second conductive layerand the light emitting layer, and the first conductive layer protrudeson sides more than the second conductive layer or the light emittinglayer; forming a first electrode which is electrically connected withthe second conductive layer and connected from a top of the lightemitting structure, through a sidewall of the light emitting structure,and to a sidewall of the groove; removing a part of the first electrodeto expose a part of a region where the first conductive layer protrudes;and forming a second electrode which is electrically connected with thefirst conductive layer on the exposed first conductive layer.

According to an aspect of the present invention, there is provided amethod of fabricating a light emitting device, the method using one ofthe methods of fabricating a light emitting element described above.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features and advantages of the invention will beapparent from the more particular description of preferred embodimentsof the invention, as illustrated in the accompanying drawings in whichlike reference characters refer to the same parts throughout thedifferent views. The drawings are not necessarily to scale, emphasisinstead being placed upon illustrating the principles of the invention.In the drawings, the thickness of layers and regions are exaggerated forclarity.

FIG. 1 is a perspective view illustrating a light emitting elementaccording to a first exemplary embodiment of the present invention.

FIG. 2 is a sectional view taken along a line II-II+ of FIG. 1.

FIG. 3 is a sectional view illustrating operation of the light emittingelement according to the first exemplary embodiment of the presentinvention.

FIG. 4 is a sectional view illustrating a light emitting elementaccording to a second exemplary embodiment of the present invention.

FIG. 5 is a perspective view illustrating a light emitting elementaccording to a third exemplary embodiment of the present invention.

FIG. 6 is a sectional view illustrating a light emitting elementaccording to a fourth exemplary embodiment of the present invention.

FIG. 7 is a sectional view illustrating a light emitting elementaccording to a fifth exemplary embodiment of the present invention.

FIG. 8 is a perspective view illustrating a light emitting deviceaccording to a first exemplary embodiment of the present invention.

FIGS. 9A through 9C are sectional views taken along a line A-A′ of FIG.8.

FIG. 10 is a sectional view illustrating a light emitting deviceaccording to a second exemplary embodiment of the present invention.

FIG. 11 is a sectional view illustrating a light emitting deviceaccording to a third exemplary embodiment of the present invention.

FIG. 12 is a sectional view illustrating a light emitting deviceaccording to a fourth exemplary embodiment of the present invention.

FIG. 13 is a sectional view illustrating a light emitting deviceaccording to a fifth exemplary embodiment of the present invention.

FIG. 14 is a sectional view illustrating a light emitting deviceaccording to a sixth exemplary embodiment of the present invention.

FIGS. 15 through 16B are plane and perspective views illustrating alight emitting device according to a seventh exemplary embodiment of thepresent invention.

FIG. 17 is a sectional view illustrating a light emitting deviceaccording to an eighth exemplary embodiment of the present invention.

FIGS. 18 through 21 are drawings illustrating light emitting devicesaccording to ninth through twelfth exemplary embodiments of the presentinvention.

FIGS. 22 through 26 are sectional views illustrating steps of afabrication method of a light emitting device according to the firstexemplary embodiment of the present invention.

FIGS. 27 and 28 are sectional views illustrating steps of a fabricationmethod of a light emitting device according to the fourth exemplaryembodiment of the present invention.

FIGS. 29 through 32 are sectional views illustrating steps of afabrication method of a light emitting device according to the fifthexemplary embodiment of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

It will be understood that when an element or layer is referred to asbeing “on”, “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on”, “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Spatially relative teams, such as “beneath”, “below”, “lower”, “above”,“upper”, and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures.

Embodiments described herein will be described referring to plan viewsand/or cross-sectional views by way of ideal schematic views of theinvention. Accordingly, the exemplary views may be modified depending onmanufacturing technologies and/or tolerances. Therefore, the embodimentsof the invention are not limited to those shown in the views, butinclude modifications in configuration formed on the basis ofmanufacturing processes. Therefore, regions exemplified in figures haveschematic properties and shapes of regions shown in figures exemplifyspecific shapes of regions of elements and not limit aspects of theinvention.

FIGS. 1 through 3 are drawings illustrating a light emitting elementaccording to a first exemplary embodiment of the present invention.Specifically, FIG. 1 is a perspective view illustrating a light emittingelement according to a first exemplary embodiment of the presentinvention. FIG. 2 is a sectional view taken along a line II-II′ ofFIG. 1. FIG. 3 is a sectional view illustrating operation of the lightemitting element according to the first exemplary embodiment of thepresent invention. The light emitting element according to the firstexemplary embodiment of the present invention is a flip chip type oflight emitting element.

Referring to FIGS. 1 and 2, a light emitting element 1 according to thefirst exemplary embodiment of the present invention includes a substrate100 and a light emitting structure 110 comprising a first conductivelayer 112 of a first conductivity type, a light emitting layer 114, anda second conductive layer 116 of a second conductivity type which aresequentially stacked and formed on the substrate 100. Also, the lightemitting element 1 includes a first electrode 140 which is electricallyconnected to the first conductive layer 112 and a second electrode 150which is electrically connected to the second conductive layer 116.

The first conductive layer 112, the light emitting layer 114, and thesecond conductive layer 116 can include In_(x)Al_(y)Ga_((1-x-y))N(0≦x≦1, 0≦y≦1) (i.e., various materials including GaN). Thus, the firstconductive layer 112, the light emitting layer 114, and the secondconductive layer 116 can be, for example, AlGaN or InGaN.

The first conductive layer 112 is of the first conductivity type (forexample, n-type), and the second conductive layer 116 is of the secondconductivity type (for example, p-type). However, depending on designmethods, the first conductive layer 112 can be of the secondconductivity type (for example, p-type), and the second conductive layer116 can be of the first conductivity type (for example, n-type).

The light emitting layer 114 is a region where carriers of the firstconductive layer 112 (for example, electrons) and carriers of the secondconductive layer 116 (for example, holes) are combined to generatelight. Although not specifically illustrated in the drawing, the lightemitting layer 114 can include a well layer and a barrier layer. Sincethe well layer has a smaller band gap than that of the barrier layer,carriers (electrons, holes) are gathered in the well layer and combined.Depending on the number of well layers, the light emitting layer 114 caninclude a Single Quantum Well (SQW) structure and a Multiple QuantumWell (MQW) structure. The SQW structure includes a single well layer andthe MQW structure includes multiple well layers. To control lightemitting characteristics, at least one of B, P, Si, Mg, Zn, Se, and Alcan be doped into at least one of the well layer or the barrier layer.

As illustrated in FIG. 2, since the width of the first conductive layer112 is larger than the width of the second conductive layer 116 and thelight emitting layer 114, the first conductive layer 112 can protrude onsides. (i.e., the first conductive layer 112 can protrude more than thesecond conductive layer 116 or the light emitting layer 114.)

A first dielectric layer 121 can be formed conformally on the sidewallsof the substrate 100. A second dielectric layer 122 is formedconformally along the profile of the light emitting structure 110, andit is patterned to expose part of the first conductive layer 112 (partof region where the first conductive layer 112 protrudes) and part ofthe second conductive layer 116. Also, the first dielectric layer 122can be formed on the first dielectric layer 121. Thus, on the sidewallsof the substrate 100 two layers of the dielectric layer 121 and 122 areformed, and on sidewalls of the light emitting structure 110 one layerof the dielectric layer 122 can be formed.

The first dielectric layer 121 and the second dielectric layer 122 caninclude a silicon oxide layer, a silicon nitride layer, an aluminumoxide layer, or an aluminum nitride layer. The first dielectric layer121 and the second dielectric layer 122, for example, can be formedusing PECVD (Plasma Enhanced Chemical Vapor Deposition), thermaloxidation, electron beam deposition, or sputtering.

On the first conductive layer 112 exposed by the second dielectric layer122, a first ohmic layer 131 and the first electrode 140 are formed. Onthe second conductive layer 116 exposed by the second dielectric layer122, a second ohmic layer 132 and the second electrode 150 can beformed. In particular, part of the second electrode 150 can be connectedfrom the top of light emitting structure 110, through the sidewalls ofthe light emitting structure 110, to the sidewalls of the substrate 100.Thus, the second electrode 150 can be formed conformally along theprofiles of the light emitting structure 110 and the substrate 100.Also, as illustrated in FIG. 2, the light emitting structure 110 or thesubstrate 100 can have a side slope since the bottom width is largerthan the top width. Thus, since the second electrode 150 is formedconformally along the profile of the light emitting structure 110 andthe substrate 100, the second electrode 150 formed on the light emittingstructure 110 and the second electrode 150 formed on the substrate 100can have side slopes. As described in detail below in connection withFIG. 3, the second electrode 150 formed in such way serves as areflector and allows light generated in the light emitting structure 110to be reflected by the second electrode 150 and exit outside easily.

Also, the second electrode 150 is separated from the first electrode140, and can surround the first electrode 140. Since the secondelectrode 150 is formed not only on the sidewalls of the light emittingstructure 110 but also on the sidewalls of the substrate 100, the secondelectrode 150 surrounds the first electrode 140.

Each of the first ohmic layer 131 and the second ohmic layer 132 caninclude at least one of indium tin oxide (ITO), zinc (Zn), zinc oxide(ZnO), silver (Ag), titanium (Ti), aluminum (Al), gold (Au), nickel(Ni), indium oxide (In₂O₃), tin oxide (SnO₂), copper (Cu), tungsten (W),and platinum (Pt). Each of the first electrode 140 and the secondelectrode 150 can include at least one of silver (Ag), aluminum (Al),Indium Tin Oxide (ITO), copper (Cu), nickel (Ni), chrome (Cr), gold(Au), titanium (Ti), platinum (Pt), vanadium (V), tungsten(W), andmolybdenum (Mo). In particular, for the second electrode 150 silver (Ag)and aluminum (Al) having high reflection characteristics can be used.

When the light emitting structure 110 is formed on one side of thesubstrate (i.e., the top side in FIG. 2), the other side of thesubstrate 100 and a part of the second electrode 150 can be positionedon a same plane P. Such a structure, as described in detail below, isused to facillitate a grinding process when dividing the substrate inchip unit; however, the invention is not limited thereto.

The substrate 100 can be made of any material that can grow the firstconductive layer 112, the light emitting layer 114, and the secondconductive layer 116. For example, the substrate 100 can be a dielectricsubstrate such as sapphire (Al₂O₃) and zinc oxide (ZnO) or can be aconductive substrate such as silicon (Si) and silicon carbide (SiC).

Also, although not illustrated in the drawings, on the surface of thesecond conductive layer 116, texture patterns can be formed. If thetexture patterns are formed, more light can exit the light emittingstructure 110, and as a result light extraction efficiency can beimproved. Although not illustrated in the drawings, a buffer layer canbe formed between the substrate 100 and the first conductive layer 112.The buffer layer serves as a seed layer when growing the firstconductive layer 112. The buffer layer can be formed with any materialthat can serve as a seed layer and, for example, can beInxAlyGa(1-x-y)N(0≦x≦1, 0≦y≦l) and SixCyN(1-x-y)(0≦x≦1, 0≦y≦1.

Also, although it is illustrated that two layers of the dielectriclayers 121 and 122 are formed on the sidewalls of the substrate 100 andone layer of the dielectric layer 122 is formed on the sidewall of thelight emitting structure 110, it is not limited thereto. For example, nlayers (n is a natural number greater than 1) of dielectric layers canbe formed between the side of substrate 100 and the second electrode150, and m layers (m is a natural number smaller than n) of dielectriclayer can be formed between the sidewall of the light emitting structure110 and the second electrode 150.

Referring to FIG. 3, operation of the light emitting element 1 accordingto a first exemplary embodiment is described.

If the first conductive layer 112 is n-type and the second conductivelayer 116 is p-type, first bias BIAS (−) is applied to the firstconductive layer 112 through the first electrode 140 and the first ohmiclayer 131, and second bias BIAS (+) is applied to the second conductivelayer 116 through the second electrode 150 and the second ohmic layer132. On the contrary, if the second conductive layer 116 is n-type andthe first conductive layer 112 is p-type, the second bias BIAS (+) isapplied to the first conductive layer 112 through the first electrode140 and the first ohmic layer 131 and the first bias BIAS (−) is appliedto the second conductive layer 116 through the second electrode 150 andthe second ohmic layer 132.

When bias is applied as described above, a forward bias is applied tothe light emitting structure 110. Due to the forward bias, light L1, L2,and L3 is generated from the light emitting layer 114. Part of the lightL1 can exit without reflection, part of the light L2 can exit due to thereflection from the second electrode 150 formed on the sidewall of thelight emitting structure 110, and part of the light L3 can exit due tothe reflection from the second electrode 150 formed on the sidewall ofthe substrate 100.

As described previously, light generated from the light emittingstructure 110 can be locked inside, and the second electrode 150 whichserves as a reflector allows light to exit easily. Thus, although lightgenerated from the light emitting structure 110 (for example, like L1)cannot exit directly, the possibility of exiting can be higher whenreflected by the second electrode 150 several times. As a result, lightextraction efficiency can be higher. In particular, the light emittingelement 1 according to the first exemplary embodiment of the presentinvention can further increase light extraction efficiency since thesecond electrode 150 is formed along the sidewall of the substrate 100.

FIG. 4 is a sectional view illustrating a light emitting elementaccording to a second exemplary embodiment of the present invention.

Referring to FIG. 4, a difference between a light emitting element 2according to the second exemplary embodiment of the present inventionand the first exemplary embodiment is that the light emitting element 2according to the second exemplary embodiment has a slope on a sidewallof a substrate 100 and no slope on a sidewall of a light emittingstructure 110.

Although not illustrated in the drawings, it is possible that the lightemitting structure 110 has a sidewall slope and the substrate 100 has nosidewall slope. Also, neither the light emitting structure 110 nor thesubstrate 100 can have a sidewall slope.

FIG. 5 is a perspective view illustrating a light emitting elementaccording to a third exemplary embodiment of the present invention.

Referring to FIG. 5, the difference between a light emitting element 3according to the third exemplary embodiment of the present invention andthe first exemplary embodiment is that in the light emitting element 3according to the third exemplary embodiment, a light emitting structure110 is formed in a cylinder shape.

FIG. 6 is a sectional view illustrating a light emitting elementaccording to a fourth exemplary embodiment of the present invention.

Referring to FIG. 6, the difference between a light emitting element 4according to the fourth exemplary embodiment of the present inventionand the first exemplary embodiment is that in the light emitting element4 according to the fourth exemplary embodiment, a dome pattern 102 isformed on a substrate 100, and a light emitting structure 110 is formedconformally along the dome pattern 102.

Specifically, as illustrated in the drawing, the dome pattern 102 can bea convex dome shape; however, it is not limited thereto. Also, asillustrated in the drawing, although only one dome pattern 102 is shownto be formed on the substrate 100, the invention is not limited thereto.Thus, several dome patterns can be formed. Also, the width of the domepattern 102 can be between about 100 μm and about 1000 μm. For example,the width can be about 300 μm which is about the size of a small chip.

In particular, in the light emitting element 4 according to the fourthexemplary embodiment, the light emitting structure 110 is formedconformally along the dome pattern 102 described previously, i.e, thelight emitting structure 110 can be formed in an arch shape.

If the light emitting structure 110 is formed conformally along the domepattern 102 to have a curve shape, a large amount of light generatedfrom the light emitting structure 110 can be perpendicular to thesurface of the light emitting structure 110. Thus, a large amount oflight generated from the light emitting structure 110 can exit easily.Thus, light extraction efficiency can be improved.

FIG. 7 is a sectional view illustrating a light emitting elementaccording to a fifth exemplary embodiment of the present invention.

Referring to FIG. 7, a dome pattern 104 used in a light emitting element5 according to the fifth exemplary embodiment of the present inventioncan be a concave dome type (inverted dome type). A light emittingstructure 110 is formed conformally along the dome pattern 104.

Also, as illustrated in the drawing, although only one dome pattern 104is shown to be formed on a substrate 100, the invention is not limitedthereto. Thus, several dome patterns can be formed. Also, the width ofthe dome pattern 104 can be between about 100 μm and about 1000 μm. Forexample, the width can be about 300 μm which is about the size of asmall chip.

If the light emitting structure 110 is formed conformally along the domepattern 104 to have a curve shape, a large amount of light generatedfrom the light emitting structure 110 can be perpendicular to thesurface of the light emitting structure 110. Thus, a large amount oflight generated from the light emitting structure 110 can exit easily.Thus, light extraction efficiency can be improved.

Hereinafter, a light emitting device fabricated by using the lightemitting elements 1 through 5 is described. To aid understanding, alight emitting device using the light emitting element 1 according tothe first exemplary embodiment of the present invention is illustrated;however, the present invention is not limited thereto. In accordancewith the invention, light emitting devices using the light emittingelements 2 through 5 can be made.

FIG. 8 is a perspective view illustrating a light emitting deviceaccording to a first exemplary embodiment of the present invention.FIGS. 9A through 9C are sectional views taken along a line A-A′ of FIG.8. Although FIGS. 9A through 9C illustrate a top view type lightemitting package, the invention is not limited thereto.

First, referring to FIGS. 8 and 9A, in a light emitting device 11according to a first exemplary embodiment of the present invention, asub-mount 230 where a light emitting element 1 is mounted is placed on apackage body 210. A slot 212 is formed in the package body 210, and thesub-mount 230 where a light emitting element 1 is mounted can be placedin the slot 212. A sidewall of the slot 212 can have a slope. Lightgenerated in the light emitting element 1 can go forward by reflectionfrom a sidewall. The size of the slot 212 can be determined byconsidering the amount of light, which is generated in the lightemitting element 1, reflected from the sidewall, reflection angle, typeof transparent resin that fills in the slot 212, and type of a phosphor.Also, the sub-mount 230 can be placed in the middle of the slot 212. Ifthe distances between the light emitting element 1 and the sidewalls arethe same, ununiformity of chromaticity can be prevented.

For package body 210, organic materials with superior light fastnessincluding silicon resin, epoxy resin, acrylic resin, urea resin, fluororesin, and imide resin or inorganic materials with light fastnessincluding glass and silica gel can be used. Also, in order to preventresin from melting by heat during fabrication processes, thermo-settingresin can be used. Also, in order to relieve temperature stress ofresin, various fillers including oxide aluminum or such compound can bemixed. Also, the package body 210 is not limited to resin. Ceramic ormetal materials can be used for part (for example, a sidewall) of thepackage body 210 or the entire package body 210. For example, when metalis used for the entire package body 210, it is easy to discharge heatgenerated from the light emitting element 1.

Also, in the package body 210 leads 214 a and 214 b which areelectrically connected to the light emitting element 1 are installed.The light emitting element 1 is electrically connected to the sub-mount230, and the sub-mount 230 and the leads 214 a and 214 b can beconnected through one or more vias. Also, materials having high heatconductivity can be used as the leads 214 a and 214 b since heatgenerated from the light emitting element 1 can be discharged throughthe leads 214 a and 214 b.

Although not illustrated in the drawing, at least a part of the slot 212can be filled with a transparent resin layer. Also, phosphor can beformed on the transparent resin layer. Alternatively, the transparentresin layer and phosphor can be mixed together. Such application methodsare illustratated in FIGS. 12 through 14. For example, using thephosphor to generate white color can be achieved according to thefollowing. If the light emitting element 1 emits blue wavelength, thephosphor can include yellow phosphor and red phosphor to improve colorrendering index (CRI). Also, if the light emitting element 1 emits UVwavelength, the phosphor can include all of RGB (Red, Green, and Blue).

The difference between the light emitting device illustrated in FIG. 9Band the light emitting device illustrated in FIG. 9A is that in thelight emitting device illustrated in FIG. 9B the sub-mount 230 and theleads 214 a, 214 b are not connected through wires (216 a, 216 b in FIG.3A) and connected though via 232 installed in the sub-mount 230.

The difference between the light emitting device illustrated in FIG. 9Cand the light emitting device illustrated in FIG. 9A is that in thelight emitting device illustrated in FIG. 9C the sub-mount 230 and theleads 214 a and 214 b are not connected through wires 216 a and 216 b inFIG. 3A and are connected though an interconnection 234 installed alonga top, a side, and a bottom.

FIGS. 10 and 11 are vertical views illustrating light emitting devicesaccording to second and third exemplary embodiments of the presentinvention. Referring FIGS. 10 and 11, connection relationships between alight emitting element according to exemplary embodiments of the presentinvention and a circuit substrate are described.

First, referring to FIG. 10, a light emitting device 12 according to asecond exemplary embodiment of the present invention includes a circuitsubstrate 300 and a light emitting element 1 placed on the circuitsubstrate 300.

The circuit substrate 300 includes a first wire 320 and a second wire310, which are electrically isolated from each other. The first wire 320and the second wire 310 are placed on one side of the circuit substrate300.

Since the light emitting element 1 is a flip chip type, it is mounted onthe circuit board 300 upside down. The first wire 320 is electricallyconnected to a first electrode 140 of the light emitting element 1through a conductive resin 335, and the second wire 310 is electricallyconnected to a second electrode 150 of the light emitting element 1through the conductive resin 335.

Referring to FIG. 11, the difference between a light emitting device 13according to the third exemplary embodiment of the present invention andthe second exemplary embodiment is that in the light emitting device 13according to the third exemplary embodiment a circuit substrate 300includes through vias 316 and 326.

Specifically, on one side of the circuit substrate 300 a first wire 320and a second wire 310 which are electrically isolated from each otherare formed, and on the other side of circuit substrate 300 a third wire322 and a fourth wire 312 which are electrically isolated from eachother are formed. The first wire 320 and the third wire 322 areconnected through the first through via 326, and the second wire 310 andthe fourth wire 312 are connected through the second through via 316.

FIG. 12 is a sectional view illustrating a light emitting deviceaccording to a fourth exemplary embodiment of the present invention.

Referring to FIG. 12, a difference between a light emitting device 14according to the fourth exemplary embodiment of the present inventionand the second exemplary embodiment is that the light emitting device 14according to the fourth exemplary embodiment includes a phosphorescencelayer 340 that surrounds a light emitting element 1 and a secondtransparent resin 350 that surrounds the phosphorescence layer 340.

The phosphorescence layer 340 can be a mixture of a first transparentresin 342 and a phosphor 344. Since the phosphor 344 distributed in thephosphorescence layer 340 absorbs light generated from the lightemitting element 1 and converts the absorbed light into light with adifferent wave length, light emitting characteristics can be furtherimproved with better distribution of the phosphor 344. In this case,wave length change and color mixing effect due to the phosphor 344 canbe improved.

For example, the light emitting device 14 can form the phosphorescencelayer 340 to create white color. If the light emitting element 1 emitslight with blue wavelength, the phosphor 344 can include yellow phosphorand also can include red phosphor to improve characteristics of colorrendering index, CRI. Also, if the light emitting element 1 emits lightwith UV wavelength, the phosphor 344 can include all of RGB (Red, Green,and Blue).

For the first transparent resin 342 any material that can distribute thephosphor 344 stably can be used. For example, epoxy resin, siliconeresin, hard silicone resin, modified silicone resin, urethane resin,oxetane resin, acrylic resin, polycarbonate resin, and polyimide resincan be used.

The phosphor 344 can be any material that can absorb light created froma light emitting structure 110 and converts the absorbed light intolight with a different wavelength. For example, it can be at least oneselected from the group consisting of nitride/oxynitride based phosphormainly activated by lanthanoid series elements such as Eu and Ce,alkaline earth halogen apatite phosphor mainly activated by lanthanoidseries elements such as Eu and transition metal series elements such asMn, alkaline earth metal boron halogen phosphor, alkaline earth metalaluminate phosphor, alkaline earth silicate phosphor, Alkaline metalsulfured phosphor, alkaline earth thiogallate phosphor, alkaline earthsilicon nitride phosphor, germanate, rare earth aluminate mainlyactivated by lanthanoid series elements such as Ce, rare earth silicate,and organic compound and organic complex mainly activated by lanthanoidelements such as Eu. The following phosphors can be used for specificexamples, but the invention is not limited thereto.

Nitride based phosphor mainly activated by lanthanoid series elementssuch as Eu and Ce can be M₂Si₅N₈:Eu (M is at least one selected from thegroup consisting of Sr, Ca, Ba, Mg, and Zn). Also, the nitride phosphormainly activated by lanthanoid series elemenst such as Eu and Ce can beM2Si₅N₈:Eu, MSi₇N₁₀:Eu, M_(1.8)Si₅O_(0.2)N₈:Eu, andM_(0.9)Si₇O_(0.1)N₁₀:Eu (M is at least one selected from the groupconsisting of Sr, Ca, Ba, Mg, and Zn).

Oxynitride based phosphor mainly activated by lanthanoid series elementssuch as Eu and Ce can be MSi₂O₂N₂:Eu (M is at least one selected fromthe group consisting of Sr, Ca, Ba, Mg, and Zn).

Alkaline earth halogen apatite phosphor mainly activated by lanthanoidseries elements such as Eu and transition metal series element such asMn can be Oxynitride phosphor mainly activated by lanthanoid serieselements such as Eu and Ce can be M₅(PO₄)₃ X:R (M is at least oneselected from the group of Sr, Ca, Ba, Mg, and Zn, X is at least oneselected from the group consisting of F, Cl, Br, and I, and R is atleast one selected from the group consisting of Eu, Mn, and Eu)

Alkaline earth metal boron halogen phosphor can be M₂B₅O₉X:R (M is atleast one selected from the group consisting of Sr, Ca, Ba, Mg, and Zn,X is at least one selected from the group consisting of F, Cl, Br, andI, R is at least one selected from the group of Eu and Mn.)

Alkaline earth metal aluminate phosphor can be SrAl₂O₄:R, Sr₄Al₁₄O₂₅:R,CaAl₂O₄:R, BaMg₂Al₁₆O₂₇:R, BaMg₂Al₁₆O₁₂:R, and BaMgAl₁₀O₁₇:R (R is atleast one selected from the group consisting of Eu and Mn).

Alkaline metal sulfured phosphor can be La₂O₂S:Eu, Y₂O₂S:Eu, Gd₂O₂S:Eu,and so on.

Rare earth aluminate phosphor mainly activated by lanthanoid serieselements such as Ce can be YAG series phosphor such as Y₃Al₅O₁₂:Ce,(Y_(0.8)Gd_(0.2))₃Al₅O₁₂:Ce, Y₃(Al_(0.8)Ga_(0.2))₅O₁₂:Ce, and (Y, Gd)₃(Al, Ga)₅ O₁₂. Also, Tb₃Al₅O₁₂:Ce, Lu₃Al₅O₁₂:Ce, and so on whose part orwhole is substitute with Tb or Lu can be used.

Alkaline earth silicate phosphor can include silicate and for example,(SrBa)₂SiO₄:Eu can be used.

In addition, ZnS:Eu, Zn₂GeO₄:Mn, and MGa₂S₄:Eu (M is one selected fromthe group consisting of Sr, Ca, Ba, Mg, and Zn and X is one selectedfrom the group consisting of F, Cl, Br, and I).

The phosphor described previously can include at least one selected fromthe group consisting of Tb, Cu, Ag, Au, Cr, Nd, Dy, Co, Ni, and Tiinstead of Eu or in addition to Eu.

Also, a phosphor other than the phosphors described previously that hasthe same performance and effects can be used.

The second transparent resin 350 has a shape of a lens and diffuseslight created from the light emitting element 1. By controllingcurvature and flatness of the second transparent resin 350,diffusion/extraction characteristics can be controlled. Also, the secondtransparent resin 350 is formed to surround the phosphorescence layer340 and can protect the phosphorescence layer 340. In a humid condition,the characteristics of phosphor 344 can be degraded.

Any material that allows light penetration can be used as the secondtransparent resin 350. For example, epoxy resin, silicone resin, hardsilicone resin, modified silicone resin, urethane resin, oxetane resin,acrylic resin, polycarbonate resin, and polyimide can be used.

FIG. 13 is a sectional view illustrating a light emitting deviceaccording to a fifth exemplary embodiment of the present invention.

Referring to FIG. 13, in a light emitting device 15 according to a fifthexemplary embodiment of the present invention a phosphor 344 is formedalong profiles of a light emitting element 1 and a circuit substrate300.

In this case, the phosphor 344 can be applied without an extra firsttransparent resin (refer to 342 in FIG. 12).

In a case where the phosphor 344 is applied without the extra firsttransparent resin, the transparent resin that surrounds the lightemitting element 1 is a single layer (i.e., single layer of 350 without342).

FIG. 14 is a sectional view illustrating a light emitting deviceaccording to a sixth exemplary embodiment of the present invention.

Referring to FIG. 14, a light emitting device 16 according to the sixthexemplary embodiment of the present invention is different from thefourth exemplary embodiment such that the light emitting device 16according to the sixth exemplary embodiment includes a first transparentresin 342 that surrounds a light emitting element 1, a phosphor 344formed on the first transparent resin 342, and a second transparentresin 350 formed on the phosphor 344.

Since the first transparent resin 342 and the phosphor 344 are notapplied mixed together but are applied separately, the phosphor 344 canbe formed thinly and conformally along the surface of the firsttransparent resin 342.

FIGS. 15 through 16B are drawings illustrating a light emitting deviceaccording to a seventh exemplary embodiment of the present invention.Specifically, FIGS. 15 through 16B are drawings illustrating a lightemitting element array where multiple light emitting elements are placedon a circuit substrate. In particular, FIGS. 16A and 16B are drawingsillustrating a shape where a phosphorescence layer 340 and a secondtransparent resin 350 are formed on the light emitting element array.

First, referring to FIG. 15, on a circuit substrate 300, a first wire320 and a second wire 310 extend in one direction in parallel. A lightemitting element 1 is placed on the first wire 320 along the extendeddirection of the first wire 320. When a first bias is applied to thefirst wire 320 and a second bias is applied to the second wire 310, aforward bias is applied to a light emitting structure (not shown) insidethe light emitting element 1 and the light emitting element 1 emitslight.

Here, referring to FIG. 16A, the phosphorescence layer 340 and thesecond transparent resin 350 can be formed in a line type. For example,as illustrated in FIG. 15, when the light emitting element 1 is placedalong the extended direction of the first wire 320, the phosphorescencelayer 340 and the second transparent resin 350 can be placed along theextended direction of the first wire 320. Also, the phosphorescencelayer 340 and the second transparent resin 350 can be formed such thatthey surround both the first wire 320 and the second wire 310.

Referring to FIG. 16B, the phosphorescence layer 340 and the secondtransparent resin 350 can be formed in a dot type. Each of thephosphorescence layers 340 and each of the second transparent resin 350can be formed such that they surround only the corresponding lightemitting element 1.

FIG. 17 is a sectional view illustrating a light emitting deviceaccording to an eighth exemplary embodiment of the present invention.

FIG. 17 illustrates a light emitting device according to the eighthexemplary embodiment of the present invention, which is an end product.The light emitting device according to the exemplary embodiments of thepresent invention can be used in various devices including light device,display device, mobile device (cellular phone, MP3 player, navigation,and so on). The exemplary device illustrated in FIG. 17 is an edge typeBLU (Back Light Unit) used in LCD (Liquid Crystal Display). Since LCDdoes not include a self light source, BLU is used as a light source andBLU mainly emits light from a back of a LCD panel.

Referring to FIG. 17, the BLU includes a light emitting element 1, alight guide panel 410, a reflection panel 412, a diffusion sheet 414,and a pair of prism sheets 416.

The light emitting element 1 provides light. Here, the light emittingelement 1 used can be a side view type light emitting element.

The light guide panel 410 guides light supplied to a liquid crystalpanel 450. The light guide panel 410 is formed with transparent materialsuch as acrylic resin which is a series of plastic, and it moves lightcreated from a light emitting device toward the liquid crystal panel 450placed on the light guide panel 410. Thus, on a rear side of the lightguide panel 410 various kinds of patterns 412 a are printed to changemovement direction of light entering the light guide panel 410 towardthe liquid crystal panel 450.

The reflection panel 412 is installed on a bottom side of the lightguide panel 410 and reflects light discharged to the bottom of the lightguide panel 410 to an upper side. The reflection panel 412 reflectslight which is not reflected by the various kinds of patterns 412 atoward an output face of the light guide panel 410. As a result, lightloss is reduced and uniformness of light that penetrates the output faceof the light guide panel 410 is improved.

The diffusion sheet 414 diffuses light that comes out of the light guidepanel 410 and prevents light from partial congestion.

On the prism sheet 416 prisms in triangular shape are formed in auniform arrangement. Typically, the prism sheet 416 consists of twosheets, and the prism arrangements are placed to be crossed with respectto each other at a predetermined angle and allow light diffused from thediffusion sheet 414 to move vertically to the liquid crystal panel 450.

FIGS. 18 through 21 are drawings illustrating a light emitting deviceaccording to ninth through twelfth exemplary embodiments of the presentinvention.

FIGS. 18 through 21 illustrate exemplary devices (end products)according to the previously described light emitting device. FIG. 18illustrates a projector. FIG. 19 illustrates a headlight of anautomobile. FIG. 20 illustrates a streetlight. FIG. 21 illustrates alight lamp. The light emitting element 1 used in FIGS. 18 through 21 canbe a top view type light emitting element.

Referring to FIG. 18, light from a light source 410 passes a condensinglens 420, a color filter 430 and a shaping lens 440, reflected by a DMD(digital micro-mirror device) 450, passes a projection lens 480, andarrives at a screen 490. Inside the light source 410, the light emittingelement according to the present invention is installed.

FIGS. 22 through 26 are sectional views illustrating steps of afabrication method of a light emitting element according to the firstexemplary embodiment of the present invention.

First, referring to FIG. 22, by forming a groove 101 in a substrate 100a device formation region B is defined. Specifically, to form the groove101 in the substrate 100, for example, at least one selected from thegroup consisting of dicing equipment, a diamond tip, laser, or ICP RIE(Inductively Coupled Plasma Reactive Ion Etching) can be used. Suchgroove 101, as illustrated, can be in a U shape or a V shape. Thus, thesidewall of the groove 101 can have a slope.

Next, by forming a first dielectric layer 121 on the groove 101 and thedevice isolation region B and etching part of the first dielectric layer121, part of the device formation region B can be exposed.

Referring to FIG. 23, a first conductive layer 112, a light emittinglayer 114, a second conductive layer 116 are formed sequentially on theexposed device formation region B.

Specifically, the first conductive layer 112, the light emitting layer114, and the second conductive layer 116 can includeIn_(x)Al_(y)Ga_((1-x-y))N (0≦x≦1, 0≦y≦1). Thus, the first conductivelayer 112, the light emitting layer 114, and the second conductive layer116 can be, for example, AlGaN or InGaN. The first conductive layer 112of a first conductivity type, the light emitting layer 114, and thesecond conductive layer 116 of a second conductivity type can be grownby using MOCVD (metal organic chemical vapor deposition), liquid phaseepitaxy, hydride vapor phase epitaxy, molecular beam epitaxy, MOVPE(metal organic vapor phase epitaxy), and so on.

In particular, the first conductive layer 112, the light emitting layer114, and the second conductive layer 116 can be grown along the shape ofthe exposed device formation region B.

Thus, if the exposed device formation region B is in a rectangularshape, the first conductive layer 112, the light emitting layer 114, andthe second conductive layer 116 can be grown in square pillar shape(rectangular parallelepiped), as illustrated in FIG. 2. If the exposeddevice formation region B is in a circle shape, they can be grown incylinder shape, as illustrated in FIG. 5.

As described above, the growing method according to the shape of theexposed device formation region B can reduce the damage or stress of thefirst conductive layer 112, the light emitting layer 114, and the secondconductive layer 116. For example, the method that grows the firstconductive layer 112, the light emitting layer 114, and the secondconductive layer 116 using the device formation region B exposed incircle shape can introduce less damage or stress compared to a methodthat first grows the first conductive layer 112, the light emittinglayer 114, and the second conductive layer 116 and then performs etchingin cylinder shape using a mask.

Referring to FIG. 24, a part of the second conductive layer 116, a partof the light emitting layer 114, and a part of the first conductivelayer 112 are patterned. As a result, the width of the first conductivelayer 112 becomes wider than the width of the second conductive layer116, and a part of the first conductive layer 112 can protrude (i.e.,the first conductive layer 112 can protrude compared to the secondconductive layer 116 or the light emitting layer 114.). Here, a lightemitting structure 110 can have a side slope since the bottom width iswider than the top width. In this step, although forming a square pillarshape growth as illustrated in FIG. 23 and etching as illustrated inFIG. 24 are shown as a method used to form a slope on the sidewall ofthe light emitting structure 110, the invention is not limited thereto.For example, by adjusting a growth condition in the step of FIG. 23,square pillar shape having side slope can be formed.

Next, a second dielectric layer 122 is formed on the light emittingstructure 110 including the second conductive layer 116, the lightemitting layer 114, the first conductive layer 112 and the firstdielectric layer 121.

Then, the second dielectric layer 122 is patterned and a part of thesecond dielectric layer 122 is removed. As a result, a part of thesecond conductive layer 116 is exposed.

Referring to FIG. 25, a second ohmic layer 132 is formed on the exposedsecond conductive layer 116.

Next, a second electrode 150 which is electrically connected to thesecond ohmic layer 132 is formed. In this step, the second electrode 150can be formed from the top of the light emitting structure 110, alongthe sidewall of light emitting structure 110, and to the sidewall ofgroove 101. The sidewall of the light emitting structure 110 and thesidewall of groove 100 have slope, and the second electrode 150 isformed conformally along the light emitting structure 110 and the groove101. As a result, a part of the second electrode 150 can have a slopeand be inclined.

Referring to FIG. 26, by removing a part of the second electrode 150, apart of the projected area of the first conductive layer 112 is exposed.

Next, on the exposed first conductive layer 112 a first ohmic layer 131and a first electrode 140 which are electrically connected to the firstconductive layer 112 are formed sequentially. Here, it is not mandatoryto form the first ohmic layer 131.

Referring to FIG. 2 again, the elements are separated into chip units atthe grooves such that formation of the light emitting element 1 iscompleted.

In a mehod of fabricating the light emitting element according to thefirst exemplary embodiment of the present invention, although a grindingprocess can be used to separate elements into chip units, the inventionis not limited thereto. For example, a grinding process and a chippingprocess can be used simultaneously. Also, only a chipping process can beused.

Assuming separating into the chip units only by the grinding process, ifthe side where the light emitting structure 110 is formed is defined asone side, chip unit separation can be done by performing grinding fromthe other side of the substrate to the groove 101. In this case, theother side of the substrate 100 and part of the second electrode 150 canbe placed on the same plane P.

FIGS. 27 and 28 are sectional views illustrating steps in a fabricationmethod of a light emitting device according to the fourth exemplaryembodiment of the present invention.

Referring to FIG. 27, a mask pattern 180 in a convex dome shape isformed on a substrate 100.

Specifically, a cylinder shaped mask layer is formed on the substrate100 and the substrate 100 where the mask layer is formed is treated withhigh temperature to form the convex shaped mask pattern 180. Here, themask pattern 180, for example, can be photo resist.

Referring to FIG. 28, a dome pattern 102 is formed on the substrate 100by etching the substrate using the convex dome shaped mask pattern 180.

The subsequent processes are skipped since they can be describedidentically using FIGS. 22 through 26 and FIG. 2.

FIGS. 29 through 32 are sectional views illustrating steps in afabrication method of a light emitting device according to the fifthexemplary embodiment of the present invention.

Referring to FIG. 29, a mask layer 181 is formed on a substrate 100. Themask layer 181, for example, can be photoresist.

A concave dome pattern 182 is formed in the mask layer 181 with a tool199 where the convex dome pattern 198 is formed.

Specifically, as illustrated in FIG. 30, the mask layer 181 is pressedby the tool 199 where the convex dome pattern 198 is formed. Since themask layer 181 is pressed by the tool 199 where the convex dome pattern198 is formed, the concave dome pattern 182 is formed in the mask layer181.

As illustrated in FIG. 30, the mask layer 181 where the concave domepattern 182 is formed is hardened by a bake 197.

Depending on the fabrication method, the bake 197 can be omitted.

As illustrated in FIG. 31, the tool 199 where the convex dome pattern198 is formed is separated from the mask layer 181.

Referring to FIG. 32, by using the mask layer 181 where the concave domepattern 182 is formed, the substrate 100 is etched. Thus, a concavepattern 104 is formed in the substrate 100.

The subsequent processes are the same as those described in connectionwith FIGS. 22 through 26 and FIG. 2. Therefore, detailed descriptionthereof will not be repeated.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetail may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims. Theexemplary embodiments should be considered in a descriptive sense onlyand not for purposes of limitation.

What is claimed is:
 1. A light emitting element comprising: a substrateincluding sidewalls having a slope; a light emitting structure includinga first conductive layer of a first conductivity type, a light emittinglayer, and a second conductive layer of a second conductivity type whichare sequentially stacked; a dielectric layer conformally foamed on thesidewalls of the substrate; a first electrode electrically connected tothe first conductive layer; and a second electrode electricallyconnected to the second conductive layer and spaced apart from the firstelectrode, wherein the dielectric layer overlaps a portion of at leastone sidewall of the light emitting structure, and wherein the dielectriclayer overlaps the first conductive layer without overlapping the secondconductive layer.
 2. The light emitting element of claim 1, furthercomprising a phosphorescence layer surrounding the light emittingstructure.
 3. The light emitting element of claim 2, wherein thephosphorescence layer is a mixture of a transparent resin and aphosphor.
 4. The light emitting element of claim 3, wherein thetransparent resin includes one resin selected from epoxy resin, siliconeresin, hard silicone resin, modified silicone resin, urethane resin,oxetane resin, acrylic resin, poly-carbonate resin and polyimide resin.5. The light emitting element of claim 3, wherein the phosphor is atleast one selected from the group comprising nitride/oxynitridephosphor, alkaline earth halogen apatite phosphor, alkaline earth metalboron halogen phosphor, alkaline earth metal aluminate phosphor,alkaline earth silicate, alkaline earth sulfide, alkaline earththiogallate, alkaline earth silicon nitride, germanate, rare earthaluminate, rare earth silicate, organic compound and organic complex andcombinations thereof.
 6. The light emitting element of claim 2, furthercomprising a transparent resin surrounding the phosphorescence layer. 7.The light emitting element of claim 6, wherein the transparent resincomprises one resin selected from epoxy resin, silicone resin, hardsilicone resin, modified silicone resin, urethane resin, oxetane resin,acrylic resin, poly-carbonate resin and polyimide resin.
 8. The lightemitting element of claim 6, wherein the transparent resin islens-shaped.
 9. The light emitting element of claim 1, furthercomprising a phosphor formed along a profile of the substrate.
 10. Thelight emitting element of claim 9, further comprising a transparentresin surrounding the phosphor and the light emitting structure.
 11. Thelight emitting element of claim 1, wherein the width of the firstconductive layer is larger than the width of the second conductive layerand the width of the light emitting layer.
 12. The light emittingelement of claim 1, further comprising a supporting substrate having afirst surface, a second surface opposite the first surface, a firstthrough via and a second through via, wherein the first through via andthe second through via extend through the support substrate from thefirst surface to the second surface, and wherein the light emittingstructure is attached to the first surface of the support substrate, andwherein the first electrode is electrically connected to the firstthrough via, and the second electrode is electrically connected to thesecond through via.
 13. The light emitting element of claim 12, whereinthe first electrode and the second electrode face the first surface ofthe supporting substrate.
 14. The light emitting element of claim 13,further comprising a first conductive resin and a second conductiveresin, wherein the first conductive resin connects the first electrodeto the first through via, and the second conductive resin connects thesecond electrode to the second through via.
 15. The light emittingelement of claim 12, further comprising a first conductive region and asecond conductive region electrically isolated from the first conductiveregion, wherein the first conductive region and the second conductiveregion are on the second surface of the supporting substrate, andwherein the first conductive region is connected with the first throughvia, and the second conductive region is connected with the secondthrough via.
 16. A light emitting element comprising: a substrateincluding sidewalls having a slope; a light emitting structure includinga first conductive layer of a first conductivity type, a light emittinglayer, and a second conductive layer of a second conductivity type whichare sequentially stacked; a dielectric layer conformally formed on thesidewalls of the substrate; a first electrode electrically connected tothe first conductive layer; a second electrode electrically connected tothe second conductive layer and spaced apart from the first electrode; aphosphorescence layer surrounding the light emitting structure; and atransparent resin surrounding the phosphorescence layer.
 17. The lightemitting element of claim 16, wherein the transparent resin comprisesone resin selected from epoxy resin, silicone resin, hard siliconeresin, modified silicone resin, urethane resin, oxetane resin, acrylicresin, poly-carbonate resin and polyimide resin.
 18. The light emittingelement of claim 16, wherein the transparent resin is lens-shaped.